Study of polycrystalline nanowire based NEMS for detection and ultra-dense 3D heterogeneous integration ; Etude de NEMS à nanofils polycristallins pour la détection et l’intégration hétérogène 3D ultra-dense

Recently, technological advances lead to a very large scale integration (VLSI) of microelectronics components at the nanoscale. Faced with the traditional miniaturization limits, the three dimensions (3D) integration open the door to heterogeneous miniaturized devices, with new chip generations. At the same time, new concepts such as junctionless nanowires and polycrystalline silicon nanowires allow to imagine low temperature processes and low-cost devices for a 3D integration on a stabilized CMOS. Poly-silicon nanowire based NEMS on CMOS for mass detection is a new "More-Than-Moore" opportunity. The NEMS could be arranged in a dense network like memory and image sensor architectures. The individual addressing of each NEMS, the functionalization for the detection of specific molecules within a large area (VLSI), allow the implementation of a new type of Multi-physics sensors, compact and highly sensitive. The purpose of this thesis has been the manufacturing and the performance evaluation of poly-silicon nanowire based NEMS. The challenge was to find the best processes with a back-end compatible thermal budget. A rigorous study of the layer physicochemical properties has been correlated with the electrical, mechanical performances and the yield of poly-silicon NEMS. This allowed us to make a selection of the best fabrication processes. NEMS manufactured at very low temperature with an active layer deposited at room temperature and recrystallized by a laser annealing exhibited high performances in terms of transduction (piezoresistivity) and frequency stability comparable to monocrystalline references. Polycrystalline silicon. ; Les progrès technologiques de ces dernières années ont permis une très forte intégration des composants de la microélectronique à l'échelle nanométrique. Face aux limites de la miniaturisation classique, les technologies d'intégration en trois dimensions (3D) ouvrent la voie vers des dispositifs miniaturisés hétérogènes avec de nouvelles générations de puces. En parallèle, de nouveaux ...