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Charged defects in highly emissive organic wide-band-gap semiconductors ; Applied Physics Letters

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اقرأ أكثر حفظ في قائمتي
  • معلومة اضافية
    • Contributors:
      Physics; Virginia Tech
    • بيانات النشر:
      AIP Publishing
    • الموضوع:
      2000
    • Collection:
      VTechWorks (VirginiaTech)
    • نبذة مختصرة :
      A combined photoluminescence (PL) -detected magnetic-resonance (PLDMR) and thermally stimulated current (TSC) study of defects in wide-band-gap para-phenylene-type semiconductors is described. As TSC probes the density of mobile charge carriers after detrapping and PLDMR reveals the influence of trapped charges on the PL, their combination yields the concentration of traps, their energetic position, and their contribution to PL quenching. The reported trap densities, which are 2 x 10(16) for the polymer and 1 x 10(14) cm(-3), for the oligomer, are the lowest reported for para-phenylene-type materials. (C) 2000 American Institute of Physics. [S0003-6951(00)03615-9].
    • File Description:
      application/pdf
    • Relation:
      http://hdl.handle.net/10919/25244; http://scitation.aip.org/content/aip/journal/apl/76/15/10.1063/1.126262; https://doi.org/10.1063/1.126262
    • الرقم المعرف:
      10.1063/1.126262
    • الدخول الالكتروني :
      http://hdl.handle.net/10919/25244
      http://scitation.aip.org/content/aip/journal/apl/76/15/10.1063/1.126262
      https://doi.org/10.1063/1.126262
    • Rights:
      In Copyright ; http://rightsstatements.org/vocab/InC/1.0/
    • الرقم المعرف:
      edsbas.BC198F55