نبذة مختصرة : Spectral diffusion can lead to considerable broadening of the line width of nitride quantum dots. Here, InGaN quantum dots grown on a nonpolar plane were shown to exhibit a decreased spectral diffusion rate compared to polar nitride dots. A robust intensity correlation method was used to measure the spectral diffusion rate of six quantum dots. A maximum spectral diffusion time of 1170 ± 50 ns was found. An increase of the rate with increasing power was observed. The decreased internal field leads to a lifetime for the nonpolar dots that is shorter than that for polar dots; the important ratio of spectral diffusion time to lifetime is more favorable for nonpolar quantum dots, thereby increasing the chances of generating indistinguishable photons.
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