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Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires

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  • معلومة اضافية
    • بيانات النشر:
      WORLD SCIENTIFIC PUBL CO PTE LTD
    • الموضوع:
      2006
    • Collection:
      Institute of Semiconductors: SEMI OpenIR (Chinese Academy of Sciences) / 中国科学院半导体研究所机构知识库
    • نبذة مختصرة :
      Morphology evolution of high-index (331)A surfaces during molecular beam epitaxy (MBE) growth have been investigated in order to uncover their unique physic properties and fabricate spatially ordered low dimensional nanostructures. Atomic Force Microscope (AFM) measurements have shown that the step height and terrace width of GaAs layers increase monotonically with increasing substrate temperature in conventional MBE. However, this situation is reversed in atomic hydrogen-assisted MBE, indicating that step bunching is partly suppressed. We attribute this to the reduced surface migration length of Ga adatoms with atomic hydrogen. By using the step arrays formed on GaAs (331)A surfaces as the templates, we fabricated laterally ordered InGaAs self-aligned nanowires.
    • Relation:
      International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series; Miao, ZH (Miao, Zhenhua); Gong, Z (Gong, Zheng); Fang, ZD (Fang, Zhidan); Niu, ZC (Niu, Zhichuan) .Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires .见：WORLD SCIENTIFIC PUBL CO PTE LTD .International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series ,PO BOX 128 FARRER RD, SINGAPORE 9128, SINGAPORE ,2006,Vol 5 No 6 5 (6): 757-762; http://ir.semi.ac.cn/handle/172111/9816
    • الرقم المعرف:
      edsbas.BABDED15