Item request has been placed! ×
Item request cannot be made. ×
loading  Processing Request

Mm-wave single-pole double-throw switches: HBT-vs MOSFET-based designs

Item request has been placed! ×
Item request cannot be made. ×
loading   Processing Request
اقرأ أكثر حفظ في قائمتي
  • معلومة اضافية
    • Contributors:
      Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN); Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA); Université catholique de Lille (UCL)-Université catholique de Lille (UCL); Puissance - IEMN (PUISSANCE - IEMN); Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA); Universidade Federal da Paraiba / Federal University of Paraiba (UFPB); Centre Interuniversitaire de Micro-Electronique (CIME); Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP); Reliable RF and Mixed-signal Systems (TIMA-RMS); Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA); Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP); Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP); Université Grenoble Alpes (UGA); Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab); Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP); Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA); Division of Graduate Education, DGE; European Commission, EC, TARANTO; Electronic Components and Systems for European Leadership, ECSEL; Laboratoire commun STMicroelectronics-IEMN T1; European Project: 737454,H2020,H2020-ECSEL-2016-1-RIA-two-stage,TARANTO(2017)
    • بيانات النشر:
      HAL CCSD
      Institute of Electrical and Electronics Engineers Inc.
    • الموضوع:
      2021
    • Collection:
      LillOA (HAL Lille Open Archive, Université de Lille)
    • الموضوع:
      Toulon; France
    • نبذة مختصرة :
      International audience ; This paper aims to compare the performance of HBT-based and MOSFET-based mm-Wave SPDT switches in a single BiCMOS technology. To the best of authors' knowledge, a direct comparison of this function in the same integrated process has never been reported before. Measurement results on two 50-GHz integrated SPDTs reveal that the HBT-based SPDT switch yields 1.7 dB of insertion loss and 14 dB of isolation in its central frequency, with a bandwidth covering the 30-80 GHz frequency range when considering a return loss greater than 10 dB. On the other hand, the MOSFET-based SPDT switch yields 2.1 dB of insertion loss and 12 dB of isolation at center frequency and a bandwidth covering the 33-80 GHz frequency range.
    • Relation:
      info:eu-repo/grantAgreement//737454/EU/TowARds Advanced bicmos NanoTechnology platforms for rf and thz applicatiOns/TARANTO; WOS: 000713009500024
    • الرقم المعرف:
      10.1109/NEWCAS50681.2021.9462753
    • الدخول الالكتروني :
      https://hal.science/hal-03362262
      https://hal.science/hal-03362262v1/document
      https://hal.science/hal-03362262v1/file/Margalef-Rovira_NEWCAS2021.pdf
      https://doi.org/10.1109/NEWCAS50681.2021.9462753
    • Rights:
      info:eu-repo/semantics/OpenAccess
    • الرقم المعرف:
      edsbas.BA0B947D