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Development of Low-power Wireless Sensor Nodes based on Assembled Nanowire Devices

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  • معلومة اضافية
    • Contributors:
      Electrical and Computer Engineering; Raman, Sanjay; Heflin, James R.; Guido, Louis J.
    • بيانات النشر:
      Virginia Tech
    • الموضوع:
      2000
    • Collection:
      VTechWorks (VirginiaTech)
    • نبذة مختصرة :
      Networked wireless sensor systems have the potential to play a major role in critical applications including: environmental monitoring of chemical/biological attacks; condition-based maintenance of vehicles, ships and aircraft; real-time monitoring of civil infrastructure including roads, bridges etc.; security and surveillance for homeland defense systems; and battlefield surveillance and monitoring. Such wireless sensor networks can provide remote monitoring and control of operations of large-scale systems using low-power, low-cost, "throw-away" sensor nodes. This thesis focuses on two aspects of wireless sensor node development: (1) post-IC assembly of nanosensor devices onto prefabricated complementary-metal-oxide-semiconductor (CMOS) integrated circuits using a technique called dielectrophoretic (DEP) assembly; and (2) design of a low-power SiGe BiCMOS multi-band ultra-wideband (UWB) transmitter for wireless communications with other nodes and/or a central control unit in a wireless sensor network. For the first part of this work, a DEP assembly test chip was designed and fabricated using the five-metal core CMOS platform technology of Motorola's HiP6W low-voltage 0.18_m Si/SiGe BiCMOS process. The CMOS chip size was 2.5mm x 2.5 mm. The required AC signal for assembling nanowires is provided to the bottom electrodes defined in the Metal 4 (M4) layer of the IC process. This signal is then capacitively coupled to the top/assembly electrodes defined in the top metal (M5) layer that is also interconnected to appropriate readout circuitry. The placement and alignment of the nanowires on the top electrodes are defined by dielectrophoretic forces that act on the nanowires. For proof of concept purposes, metallic rhodium nanowires ((length = 5m and diameter = 250 nm) were used in this thesis to demonstrate assembly onto the prefabricated CMOS chip. The rhodium nanowires were manufactured using a nanotemplated electroplating technique. In general, the DEP assembly technique can be used to manipulate a wider range of ...
    • File Description:
      ETD; application/pdf
    • Relation:
      anthesis_final.pdf; etd-09022004-212347; http://hdl.handle.net/10919/10110; http://scholar.lib.vt.edu/theses/available/etd-09022004-212347
    • الدخول الالكتروني :
      http://hdl.handle.net/10919/10110
      http://scholar.lib.vt.edu/theses/available/etd-09022004-212347
    • Rights:
      In Copyright ; http://rightsstatements.org/vocab/InC/1.0/
    • الرقم المعرف:
      edsbas.B43B8BB2