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Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer

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  • معلومة اضافية
    • الموضوع:
      2002
    • Collection:
      Institute of Semiconductors: SEMI OpenIR (Chinese Academy of Sciences) / 中国科学院半导体研究所机构知识库
    • نبذة مختصرة :
      A high density of 1.02 x 10(11) cm(-2) of InAs islands with In(0.15)Gao(0.85)As underlying layer has been achieved on GaAs (10 0) substrate by solid source molecular beam epitaxy. Atomic force microscopy and PL spectra show the size evolution of InAs islands. A 1.3 mum photoluminescence (PL) from InAs islands with In(0.15)Gao(0.85)As underlying layer and InGaAs strain-reduced layer has been obtained. Our results provide important information for optimizing the epitaxial structures of 1.3 mum wavelength quantum dots devices. (C) 2002 Elsevier Science B.V. All rights reserved.
    • Relation:
      JOURNAL OF CRYSTAL GROWTH; He J; Xu B; Wang ZG; Qu SC; Liu FQ; Zhu TW; Ye XL; Zhao FA; Meng XQ .Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer ,JOURNAL OF CRYSTAL GROWTH,2002,240 (3-4):395-400; http://ir.semi.ac.cn/handle/172111/11886
    • الرقم المعرف:
      edsbas.ACF53158