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Quasi-thermodynamic analysis of MOVPE of AlGaN

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المؤلفون: Lu DC; Duan S; Lu DC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
الموضوع:
Algan; Thermodynamic; Movpe; Aluminium Content; Vapor-phase Epitaxy; Growth; Nitride; Region; Alloys; 半导体材料; atomic layer deposition; vapor phase epitaxy; development; nitrides; atomic layer epitaxial growth; ale; mle growth; molecular layer epitaxial growth; chemical beam epitaxial growth; cbe; gas source mbe; gsmbe; metalorganic molecular beam epitaxy; mombe; ommbe; chemical vapour deposition; apcvd; chemical vapor deposition; cvd; laser cvd
نوع التسجيلة:
report
اللغة:
English

معلومة اضافية
- الموضوع:
  2000
- Collection:
  Institute of Semiconductors: SEMI OpenIR (Chinese Academy of Sciences) / 中国科学院半导体研究所机构知识库
- نبذة مختصرة :
  A quasi-thermodynamic analysis of the MOVPE growth of AlxGa1-xN alloy using TMGa, TMA1 and ammonia has been proposed. The effect of varying growth conditions (growth temperature, reactor pressure, input V/III ratio, hydrogen pressure fraction in the carrier gas and the decomposed fraction of ammonia) on the distribution coefficient of Al has been calculated. In the case of AlxGa1-xN, preferential incorporation of Al is predicted. The calculated relationship between input vapour and deposited solid composition has been compared with data in the literature. A good agreement between the calculated and the experimental composition shows that our improved model is suitable for applying to the AlxGa1-xN alloy grown by MOVPE. (C) 2000 Elsevier Science B.V. All rights reserved.
- Relation:
  JOURNAL OF CRYSTAL GROWTH; Lu DC; Duan S .Quasi-thermodynamic analysis of MOVPE of AlGaN ,JOURNAL OF CRYSTAL GROWTH,2000,208(1-4):73-78; http://ir.semi.ac.cn/handle/172111/12724
- الرقم المعرف:
  edsbas.A1FD502D

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