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Enhanced van der Waals epitaxy via electron transfer enabled interfacial dative bond formation

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  • معلومة اضافية
    • Contributors:
      National Science Foundation; U.S. Department of Energy
    • بيانات النشر:
      American Physical Society (APS)
    • الموضوع:
      2017
    • الرقم المعرف:
      10.1103/physrevmaterials.1.063402
    • الرقم المعرف:
      10.1103/PhysRevMaterials.1.063402
    • الرقم المعرف:
      10.1103/PhysRevMaterials.1.063402/fulltext
    • الدخول الالكتروني :
      http://dx.doi.org/10.1103/physrevmaterials.1.063402
      https://link.aps.org/accepted/10.1103/PhysRevMaterials.1.063402
      https://link.aps.org/article/10.1103/PhysRevMaterials.1.063402
      http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.1.063402/fulltext
    • Rights:
      https://link.aps.org/licenses/aps-default-license ; https://link.aps.org/licenses/aps-default-accepted-manuscript-license
    • الرقم المعرف:
      edsbas.9E9C96AD