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Enhanced van der Waals epitaxy via electron transfer enabled interfacial dative bond formation
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- معلومة اضافية
- Contributors:
National Science Foundation; U.S. Department of Energy
- بيانات النشر:
American Physical Society (APS)
- الموضوع:
2017
- الرقم المعرف:
10.1103/physrevmaterials.1.063402
- الرقم المعرف:
10.1103/PhysRevMaterials.1.063402
- الرقم المعرف:
10.1103/PhysRevMaterials.1.063402/fulltext
- الدخول الالكتروني :
http://dx.doi.org/10.1103/physrevmaterials.1.063402
https://link.aps.org/accepted/10.1103/PhysRevMaterials.1.063402
https://link.aps.org/article/10.1103/PhysRevMaterials.1.063402
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.1.063402/fulltext
- Rights:
https://link.aps.org/licenses/aps-default-license ; https://link.aps.org/licenses/aps-default-accepted-manuscript-license
- الرقم المعرف:
edsbas.9E9C96AD
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