نبذة مختصرة : International audience ; The increase of energy storage system power leads to open a technological pass which is to increase thevoltage level of battery racks. Available 3.3 kV Silicon Carbide (SiC) semi-conductors implemented inan ANPC topology allows tuning a 3.6 kV DC bus.Thus, researches are shifting to medium voltagesystems in which battery racks are connected in series with a middle point grounded. SiC modulesimplementation requires low inductive busbars to achieve high efficiency when rising in switchingfrequency necessary to shrink the output filter. In this paper, a methodology for reducing the parasiticinductor of the busbars (< 20 nH) is presented.
No Comments.