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New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes

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  • معلومة اضافية
    • Contributors:
      Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP); Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS); STMicroelectronics Crolles (ST-CROLLES); Yncréa Méditerranée campus de Toulon
    • بيانات النشر:
      HAL CCSD
      IEEE
    • الموضوع:
      2022
    • Collection:
      Aix-Marseille Université: HAL
    • الموضوع:
      Dallas; United States
    • نبذة مختصرة :
      International audience ; We present a detailed analysis of Off-state Time Dependent Dielectric Breakdown (TDDB) under non-uniform field performed in MOSFET devices from 28nm FDSOI, 65nm SOI to 130nm nodes. Oxide breakdown in thin gate oxide is characterized under DC stress with different gate-length LG and as function of drain voltage VDS and temperature. We show that the leakage current is a better monitor for TDDB dependence under Off-mode stress whereas a new modeling is proposed. It is found that Weibull slopes β are higher in PFET due large amount of injected hot electrons than in NFET when hot holes are involved.
    • Relation:
      hal-03659269; https://hal.science/hal-03659269; https://hal.science/hal-03659269/document; https://hal.science/hal-03659269/file/Paper%20IRPS%202022_GARBA%20SEYBOU%20Tidjani%20-%20TDDB%20OFF%20STATE%20-%20Final.pdf
    • الرقم المعرف:
      10.1109/IRPS48227.2022.9764431
    • Rights:
      info:eu-repo/semantics/OpenAccess
    • الرقم المعرف:
      edsbas.9C010123