نبذة مختصرة : ESREF 2020, 31st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Athènes, GRECE, 05-/10/2020 - 07/10/2020 ; Power electronic modules undergo electro-thermal stresses due to power losses that lead to several kinds of degradations, and finally to failure. In order to prevent power electronic modules failure, one should assess its reliability in real-time operation. For this purpose, Prognostics and Health Management (PHM) approach could be a promising tool for reliability evaluation. In this paper, we propose an analytical model that describes the metallization to wire-bond contact degradation, which is a main cause that leads the IGBT power module to fail. The usual aging indicator of such damages is the collector-emitter voltage (V_CE) that increases with degradation. The analytical model is related to this indicator and it is based on the contact resistance theory and constriction current lines. The proposed model is hence used to build a prognostic model for estimating the remaining useful lifetime (RUL) of IGBT power modules. The prognostic model is illustrated using aging data coming from accelerated power cycling tests with different stress conditions. Results show a prognostic capability.
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