نبذة مختصرة : We describe a new synthetic methodology for the preparation of high quality, emission tuneable InP-based quantum dots (QDs) using a solid, air- and moisture-tolerant primary phosphine as a group-V precursor. This presents a significantly simpler synthetic pathway compared to the state-of-the-art precursors currently employed in phosphide quantum dot synthesis which are volatile, dangerous and air-sensitive, e.g. P(Si(CH3)3)3.
Relation: https://openresearch.lsbu.ac.uk/download/dba1120d8b6e8a98b29004f5b1fe7fb0f77417b1a3b7e1d4f3a83fbb5f4ea190/1340229/d3nh00162h.pdf; https://openresearch.lsbu.ac.uk/download/5fb9e566cca6c85c6331d7c8e3e64adf3ba161391519e1f32c844a91dde71e2f/2994761/Phosphinecarboxamide%20Paper%20ammended%203%20%281%29.docx; https://openresearch.lsbu.ac.uk/download/a9ee668f5c7e1dcf5b437a22b475c200638f8f76d1ea76c28b77d5379faa8318/5673867/Phosphinecarboxamide%20Paper%20SI%20Ammended%202%20%281%29.docx; https://doi.org/10.1039/d3nh00162h; Wang, Y., Howley, J., Faria, E.N., Huang, C., Carter-Searjeant, S., Fairclough, S., Kirkland, A., Davis, J.J., Naz, F., Sajjad, T., Goicoechea, J.M. and Mark Green (2023). Phosphinecarboxamide based InZnP QDs – an air tolerant route to luminescent III–V semiconductors. Nanoscale Horizons. 8, pp. 1411-1416. https://doi.org/10.1039/d3nh00162h
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