نبذة مختصرة : The development of memristor-based stateful logic circuits can minimize data movement during the computing process to achieve in-memory computing, mitigating the von Neumann bottleneck in the current computing architecture. Herein, a method to combine resistance-resistance (R-R) and voltage-resistance (V-R) logic gates to implement exclusive logic gates composed of APMR-two-2(XOR, IMP, RIMP) and APMR-three-4XOR, where APMR means antiparallel memristors with a series resistor, is suggested. The proposed gates can accelerate XOR logic operation in a single cycle and expand for the n-bit input. The performance of the proposed logic gate is then demonstrated with a 1-bit full adder-subtractor along with the comparison of an n-bit ripple carry adder. It shows that the implementation for the n-bit adder takes 4n+1 memristors within 2n+1 steps, which significantly improves the optimization in terms of space- and time-related costs compared with other memristive logic gates. Subsequently, the improved adder circuit can be further utilized to implement an n-bit multiplier. In addition, the evaluation of the device stress on the various logic gates confirms that the proposed logic gates are reliable. ; N ; 1
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