Contributors: Physique - IEMN (PHYSIQUE - IEMN); Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN); Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA); Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA); Université catholique de Lille (UCL)-Université catholique de Lille (UCL); Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN); Nano and Microsystems - IEMN (NAM6 - IEMN); The authors would like to acknowledge financial support from STaRS-MOC Project No. 181386 the Region Hauts-de-France, fromISITE-MOST Project No. 201050, the French National Research Agency (ANR), ANR-MORETOME, No. ANR-22-CE24-0020-01, and Chist-ERANOEMIA project with contract ANR-22-CHR4-0006-01. This work was partly supported by the French Renatech network.; Renatech Network; CMNF; ANR-22-CE24-0020,MORETOME,RÉSEAUX D'OSCILLATEURS NANOMÉCANIQUES EN CAVITE OPTOMÉCANIQUE MICRO-ONDES POUR LE TRAITEMENT PARALLÈLE NEURO-INSPIRÉ DE L'INFORMATION : pour une détection intelligente(2022); ANR-22-CHR4-0006,NOEMIA,Nano-Opto-Electro-Mechanical Integrated Oscillator Arrays for Energy-Efficient Physical Reservoir Computing(2022)
نبذة مختصرة : International audience ; In this work, we present details of the nanofabrication process for achieving a silicon nitride nanoelectromechanical resonator, consisting of a membrane covered with a thin aluminium layer capacitively coupled to a suspended top gate. Critical nanofabrication steps have been discussed, including the XeF2 selective etching process to release the silicon nitride membrane from the substrate and the reflow process to fabricate a top gate of a suspended membrane. This ultra-clean and CMOS-compatible process allows the silicon nitride membrane to have a high quality factor (∼1.1×10 4) at room temperature and offers access to electrical integration with external circuits with high efficiency. In addition, we also demonstrate parametric amplification and de-amplification of the input signals by exploiting this suspended top gate. The measurement results of phase-sensitive amplifications have also been well fit by analytical caculations. The present work provides essential building blocks for further exploration of silicon nitride membrane based nanoelectromechanical resonators that can be efficiently integrated into large-scale electrical circuits.
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