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Heterogeneous integration of InAs on W/GaAs by MOVPE
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- معلومة اضافية
- بيانات النشر:
IOP Publishing
- الموضوع:
2008
- Collection:
Lund University Publications (LUP)
- نبذة مختصرة :
InAs has been grown on W-GaAs patterned substrates using MOVPE. The selectivity of the growth and the nucleation process has been studied as a function of the temperature and the V/III-ratio in the MOVPE reactor. It is shown that the W guides the nucleation of the InAs on the GaAs and that the islands formed may be used to embed metal features in a hybride InAs/GaAs structure in agreement with previous overgrowth studies of W-InAs and W-GaAs. The electrical properties has also been evaluated demonstrating a reduction of resistance by a factor 5 for a hybride structure with an embedded grating as compared to an InAs/GaAs reference sample.
- File Description:
application/pdf
- ISBN:
978-0-00-275655-6
0-00-275655-2
- Relation:
https://lup.lub.lu.se/record/1586310; http://dx.doi.org/10.1088/1742-6596/100/4/042043; https://portal.research.lu.se/files/2546520/1731339.PDF; wos:000275655200091; scopus:77954316813
- الرقم المعرف:
10.1088/1742-6596/100/4/042043
- Rights:
info:eu-repo/semantics/openAccess
- الرقم المعرف:
edsbas.63DAD4A7
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