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Atomic–layer–confined multiple quantum wells enabled by monolithic bandgap engineering of transition metal dichalcogenides
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- المؤلفون: Kim, Yoon Seok; Kang, Sojung; So, Jae-Pil; Kim, Jong Chan; Kim, Kangwon; Yang, Seunghoon; Jung, Yeonjoon; Shin, Yongjun; Lee, Seongwon; Lee, Donghun; Park, Jin-Woo; Cheong, Hyeonsik; Jeong, Hu Young; Park, Hong-Gyu; Lee, Gwan-Hyoung; Lee, Chul-Ho
- المصدر:
Science Advances ; volume 7, issue 13 ; ISSN 2375-2548
- نوع التسجيلة:
article in journal/newspaper
- اللغة:
English
- معلومة اضافية
- Contributors:
National Research Foundation of Korea; Samsung Research Funding Center of Samsung Electronics; Korea Institute of Energy Technology Evaluation and Planning and the Ministry of Trade, Industry & Energy
- بيانات النشر:
American Association for the Advancement of Science (AAAS)
- الموضوع:
2021
- نبذة مختصرة :
Multiple quantum wells based on 2D semiconductors are realized by monolithic bandgap engineering and van der Waals stacking.
- الرقم المعرف:
10.1126/sciadv.abd7921
- الدخول الالكتروني :
https://doi.org/10.1126/sciadv.abd7921
https://syndication.highwire.org/content/doi/10.1126/sciadv.abd7921
https://www.science.org/doi/pdf/10.1126/sciadv.abd7921
- Rights:
https://creativecommons.org/licenses/by-nc/4.0/
- الرقم المعرف:
edsbas.62EB9F83
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