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Mixed mode bending test for interfacial adhesion in semiconductor applications

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  • معلومة اضافية
    • بيانات النشر:
      Institute of Electrical and Electronics Engineers (IEEE)
    • الموضوع:
      2006
    • Collection:
      Eindhoven University of Technology (TU/e): Research Portal
    • نبذة مختصرة :
      Currently, prediction of interface strength is typically done using the critical energy release rate. Interface strength, however, is heavily dependent on mode mixity. Accurately predicting delamination therefore requires a material model that includes the mode dependency of interface strength. A novel test setup is designed which allows mixed mode delamination testing. The setup is a stabilized version of the mixed mode bending test previously described by Reeder and Crews (1990; 1991). It allows for the measurement of stable crack growth over the full range of mode mixities, using a single specimen design. The crack length, necessary for calculation of the energy release rate, is obtained from an analytical model. Crack length and displacement data are used in a finite element model containing a crack tip to calculate the mode mixity
    • File Description:
      application/pdf
    • Relation:
      http://repository.tue.nl/714207
    • الدخول الالكتروني :
      http://repository.tue.nl/714207
    • Rights:
      Copyright (c) Thijsse, J ; Copyright (c) Driel, WD Willem van ; Copyright (c) Gils, MAJ Marcel van ; Copyright (c) Sluis, O Olaf van der
    • الرقم المعرف:
      edsbas.5F4BE36E