Low-Temperature Fabrication of Mesoporous SiO 2 CBRAM Memory Cells on Flexible Substrates

International audience ; Conductive Bridge Random Access Memories (CBRAMs) are promising candidates for memory applications on flexible substrates. In this study, mesoporous SiO2 CBRAM memory cells were fabricated using a low-temperature process as low as 120°C, compatible with a variety of flexible substrates. We illustrate the non-volatile characteristics of the cells, which exhibit low switching voltages, a substantial ratio of 10 4 between high and low resistance states, and satisfactory bipolar switching behavior, enduring over 10 3 write-read-erase-read cycles. These results open the route to fabricate simple and low-cost crossbar memory arrays on flexible substrates by combining sol-gel and inkjet-printing processes.