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Neutron-induced Upsets in NAND Floating Gate Memories

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اقرأ أكثر حفظ في قائمتي
  • معلومة اضافية
    • Contributors:
      Gerardin, S; Bagatin, M; Ferrario, A; Paccagnella, A; Visconti, A; Beltrami, S; Andreani, C; Gorini, G; Frost, Cd
    • بيانات النشر:
      IEEE / Institute of Electrical and Electronics Engineers Incorporated
      US
    • الموضوع:
      2012
    • Collection:
      Universitá degli Studi di Roma "Tor Vergata": ART - Archivio Istituzionale della Ricerca
    • نبذة مختصرة :
      We investigate atmospheric neutron effects on floating-gate cells in NAND Flash memory devices. Charge loss is shown to occur, particularly at the highest program levels, causing raw bit errors in multilevel cell NAND, but to an extent that does not challenge current mandatory error correction specifications. We discuss the physical mechanisms and analyze scaling trends, which show a rapid increase in sensitivity for decreasing feature size.
    • Relation:
      info:eu-repo/semantics/altIdentifier/wos/WOS:000305085100033; volume:12; firstpage:437; lastpage:444; journal:IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY; http://hdl.handle.net/2108/83112; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-84862007030
    • الرقم المعرف:
      10.1109/TDMR.2012.2192440
    • Rights:
      info:eu-repo/semantics/openAccess
    • الرقم المعرف:
      edsbas.5DE675FF