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A study of Al1-xInxN growth by reflection high-energy electron diffraction-incorporation of cation atoms during molecular-beam epitaxy

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  • معلومة اضافية
    • بيانات النشر:
      //apl.aip.org/
      United States
    • الموضوع:
      2008
    • Collection:
      University of Hong Kong: HKU Scholars Hub
    • نبذة مختصرة :
      Molecular-beam epitaxy of Al1-x Inx N alloys with different indium (In) contents, x, were studied by in situ reflection high-energy electron diffraction (RHEED). Growth rates of the alloys were measured by the RHEED intensity oscillations for different source flux conditions, while the lattice parameters were derived from the diffraction patterns. It was found that under the excess nitrogen growth regime, incorporation of aluminum was complete whereas incorporation of In atoms was incomplete even at temperatures below 400 °C. © 2008 American Institute of Physics. ; published_or_final_version
    • ISSN:
      0003-6951
    • Relation:
      Applied Physics Letters; http://www.scopus.com/mlt/select.url?eid=2-s2.0-40849134307&selection=ref&src=s&origin=recordpage; Applied Physics Letters, 2008, v. 92 n. 10; 141605; WOS:000253989300033; 10; http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=92&spage=101902: 1&epage=3&date=2008&atitle=A+study+of+Al1-xInxN+growth+by+reflection+high-energy+electron+diffraction--incorporation+of+cation+atoms+during+molecular-beam+epitaxy; eid_2-s2.0-40849134307; http://hdl.handle.net/10722/80475; 92
    • الرقم المعرف:
      10.1063/1.2894191
    • Rights:
      This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License. ; Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Applied Physics Letters, 2008, v. 92 n. 10, article no. 101902) and may be found at (http://apl.aip.org/resource/1/applab/v92/i10/p101902_s1).
    • الرقم المعرف:
      edsbas.5B1A63DE