Item request has been placed! ×
Item request cannot be made. ×
loading  Processing Request

Photoluminescence properties of nitrogen-doped ZnSe epilayers

Item request has been placed! ×
Item request cannot be made. ×
loading   Processing Request
اقرأ أكثر حفظ في قائمتي
  • معلومة اضافية
    • الموضوع:
      1999
    • Collection:
      Institute of Semiconductors: SEMI OpenIR (Chinese Academy of Sciences) / 中国科学院半导体研究所机构知识库
    • نبذة مختصرة :
      The photoluminescence (PL) properties of nitrogen-doped ZnSe epilayers grown on semi-insulating GaAs(100) substrates by MBE using a rf-plasma source for N doping were investigated. The PL peak which can be related to N acceptor was observed in the PL spectra of ZnSe:N smaples. At 10K, as the excitation power density increases, the energy of donor-acceptor pair(DAP) emission shows a blue-shift and its intensity tends to saturate. As the temperature increases over a range from 10K to 300K, the relative PL intensity of donor bound exciton to that of the acceptor bound exciton increases due to the transfer between two bound excitons.
    • Relation:
      JOURNAL OF INFRARED AND MILLIMETER WAVES; Zhu ZM; Liu NZ; Li GH; Han HX; Wang ZP; Wang SZ; He L; Ji RB; Wu Y .Photoluminescence properties of nitrogen-doped ZnSe epilayers ,JOURNAL OF INFRARED AND MILLIMETER WAVES ,1999,18(1):13-18; http://ir.semi.ac.cn/handle/172111/12980
    • الرقم المعرف:
      edsbas.56E151B4