نبذة مختصرة : The development of multiple e-beam lithography equipment is foreseen as an alternative to the 193i nm immersion photolithography for the advanced technological node (less than 14 nm). This next generation lithography is a potential challenger to the EUV (13.5 nm) lithography which is also under development. However, this technology faces important challenges in controlling the contamination of the electron optics due to the adsorption of molecules outgassed from resist under exposure and the subsequent formation of a carbonaceous film on optics surface. This contamination layer can lead to the transmission loss of the optics and, consequently, degrade the tool lithographic performances (throughput, CD uniformity, Line Width Roughness, etc.). It is thus important to understand the resist outgassing and induced contamination mechanisms in order to predict their effect on the process drifts. That was the driver axis of these thesis works. Firstly, we performed the state of the art related to the works already published in the EUV lithography case. Secondly, we designed and built-up an experimental setup and developed, in parallel, the methods allowing to study the mechanisms of resist outgassing and induced contamination on electron optics simulators, called “mimic”. Thirdly, we assessed the outgassing of several resist formulations in the same operating conditions as in the Matrix platform developed by MAPPER Lithography. We also measured the induced contamination layer on the mimics for each resist formulation using the developed experimental setup. And finally, we proposed an analytical model that allows to predict the contamination film growth inside mimic holes during exposure. ; La lithographie électronique multifaisceaux (ou multi e-beam) en cours de développement est pressentie comme une alternative à la photolithographie 193 nm à immersion (193i nm) pour la production des circuits intégrés des noeuds technologiques avancés (14 nm et au-delà). Elle se présente également comme un concurrent potentiel à la ...
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