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Optimization of Reactive-Ion Etching (RIE) parameters to maximize the lateral etch rate of silicon using SF6/N2 gas mixture: An alternative to etching Si in MEMS with Au components

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  • معلومة اضافية
    • Contributors:
      Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN); Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA); Université catholique de Lille (UCL)-Université catholique de Lille (UCL); Acoustique Impulsionnelle & Magnéto-Acoustique Non linéaire - Fluides, Interfaces Liquides & Micro-Systèmes - IEMN (AIMAN-FILMS - IEMN); Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA); Laboratoire International associé sur les phénomènes Critiques et Supercritiques en électronique fonctionnelle, acoustique et fluidique (LIA LICS/LEMAC); Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF); The authors would like to thank SERB, India for Extra Mural Research Funding (EMR/2017/003117).; Renatech Network
    • بيانات النشر:
      HAL CCSD
      Elsevier
    • الموضوع:
      2021
    • Collection:
      Université Polytechnique Hauts-de-France: HAL
    • نبذة مختصرة :
      International audience ; In this work, the effects of the N2 addition to the SF6 plasma used in the isotropic silicon etching of Microelectromechanical systems (MEMS) with Au components are investigated. A four-variables Doehlert design was implemented for optimizing the etching parameters (power, pressure, gas flow rate, and N2 /SF6 ratio) to maximize the lateral etch rate of Si using SF6 /N2 gas mixture. The optimized etch condition founded for a lateral etch rate of 1.8 mm/min was: power = 143 W, chamber pressure = 86 mTorr, flow rate = 22 sccm, and N2 /SF6 ratio = 0.1. Furthermore, it was demonstrated that the established etching process avoids the structure damage of Au components.
    • Relation:
      hal-03330078; https://hal.science/hal-03330078; https://hal.science/hal-03330078/document; https://hal.science/hal-03330078/file/HAL%20version.pdf
    • الرقم المعرف:
      10.1016/j.matlet.2020.129058
    • Rights:
      info:eu-repo/semantics/OpenAccess
    • الرقم المعرف:
      edsbas.52EAFAD4