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DISTRIBUTION OF IMPURITY ATOMS BY THE VOLUME OF MICROINCUTIONS IN SAMPLES n-Si

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اقرأ أكثر حفظ في قائمتي
  • معلومة اضافية
    • بيانات النشر:
      2030 Uzbekistan Research Online
    • الموضوع:
      2021
    • Collection:
      Uzbekistan Research Online
    • نبذة مختصرة :
      The paper considers the structural structure of nickel impurity microinclusions in silicon, formed during diffusion alloying at a temperature of T = 1523 K. Using microprobe analysis, images of nickel impurity microinclusions were obtained, and their chemical compositions were determined. The distribution of Ni atoms and some technological impurities such as Fe and Cr over the volume of multilayer microinclusions was revealed, according to which the maximum percentage of impurity atoms is in its central part.
    • File Description:
      application/pdf
    • Relation:
      https://uzjournals.edu.uz/semiconductors/vol3/iss1/1; https://uzjournals.edu.uz/cgi/viewcontent.cgi?article=1213&context=semiconductors
    • الدخول الالكتروني :
      https://uzjournals.edu.uz/semiconductors/vol3/iss1/1
      https://uzjournals.edu.uz/cgi/viewcontent.cgi?article=1213&context=semiconductors
    • الرقم المعرف:
      edsbas.50E97F6B