نبذة مختصرة : International audience ; A new transistor architecture is developed by reusing already existing fabrication process bricks in an embedded nonvolatile memory (eNVM) sub-40 nm CMOS technology, resulting in a middle-voltage zero-cost transistor, ideal for lowcost products. TCAD simulations are undertaken to confirm the feasibility of the process optimization and predict the transistor performance. The new transistor is fabricated then electrically characterized. The new device shows good analogue performances for no cost added. A hot-carrier injection (HCI) degradation evaluation is performed and confirms the reliability of the device. .
No Comments.