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Design of a Novel Latch with Quadruple-Node-Upset Recovery for Harsh Radiation Hardness

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  • معلومة اضافية
    • Contributors:
      Anhui University Hefei; Hefei University of Technology (HFUT); Test and dEpendability of microelectronic integrated SysTems (LIRMM; Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier (LIRMM); Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM); Kyushu Institute of Technology (Kyutech)
    • بيانات النشر:
      HAL CCSD
    • الموضوع:
      2023
    • Collection:
      LIRMM: HAL (Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier)
    • الموضوع:
    • نبذة مختصرة :
      As CMOS processes continue to shrink, nano-scale CMOS latches have become increasingly sensitive to multiplenode upset (MNU) errors caused by radiation. To tolerate MNU, a novel quadruple-node-upset (QNU) self-recoverable latch is proposed in this paper. The proposed latch is mainly constructed from six blocks of three-level C-elements (TLCEs) and six inverters. With the mutual feedback of the various TLCEs, the proposed latch can recover from any QNU. Furthermore, due to the clock gating methodology and a highspeed transmission path, the proposed latch has lower overhead in terms of power dissipation and transmission delay. Simulation results show that the proposed latch achieves high reliability with moderate overhead compared to typical existing latches.
    • Relation:
      lirmm-04240494; https://hal-lirmm.ccsd.cnrs.fr/lirmm-04240494; https://hal-lirmm.ccsd.cnrs.fr/lirmm-04240494/document; https://hal-lirmm.ccsd.cnrs.fr/lirmm-04240494/file/ITC-Asia-23.pdf
    • Rights:
      info:eu-repo/semantics/OpenAccess
    • الرقم المعرف:
      edsbas.4C440DC