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Optical properties of tensile-strained and relaxed Ge films grown on InGaAs buffer

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اقرأ أكثر حفظ في قائمتي
  • معلومة اضافية
    • Contributors:
      Novosibirsk State University (NSU); A.V. Rzhanov Institute of Semiconductor Physics; Institut Jean Lamour (IJL); Institut de Chimie - CNRS Chimie (INC-CNRS)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS)
    • بيانات النشر:
      HAL CCSD
      American Institute of Physics
    • الموضوع:
      2014
    • Collection:
      Université de Lorraine: HAL
    • نبذة مختصرة :
      Équipe 104 : Nanomatériaux ; International audience ; GeO2/Ge/InxGa1-xAs heterostructures grown on (100) GaAs substrates were studied using Raman spectroscopy and photoluminescence (PL) spectroscopy. Both nearly pseudomorphic tensile-strained and nearly completely relaxed Ge films were grown and studied. The maximum tensile strain for Ge films with a thickness of approximate to 7 nm reaches 2.25%. PL data confirm the conclusions that the band gap offset of Ge/InxGa1-xAs is sensitive to the polarity of the bonds at the interface, and also to a parameter of x and the relaxation of strain. Depending on these parameters, the Ge/InxGa1-xAs may be type-I or type-II heterostructures.
    • Relation:
      hal-01284791; https://hal.science/hal-01284791; https://hal.science/hal-01284791/document; https://hal.science/hal-01284791/file/2014%20Volodin%20JAP%20Ge%20InGaAs%20Raman%20v2.pdf
    • الرقم المعرف:
      10.1063/1.4864466
    • الدخول الالكتروني :
      https://hal.science/hal-01284791
      https://hal.science/hal-01284791/document
      https://hal.science/hal-01284791/file/2014%20Volodin%20JAP%20Ge%20InGaAs%20Raman%20v2.pdf
      https://doi.org/10.1063/1.4864466
    • Rights:
      info:eu-repo/semantics/OpenAccess
    • الرقم المعرف:
      edsbas.40556B25