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Heterostructures based on two-dimensional layered materials and their potential applications

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  • معلومة اضافية
    • Contributors:
      King Abdullah University of Science and Technology (KAUST); Material Science and Engineering Program; Physical Science and Engineering (PSE) Division; Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
    • بيانات النشر:
      Elsevier BV
    • الموضوع:
      2015
    • Collection:
      King Abdullah University of Science and Technology: KAUST Repository
    • نبذة مختصرة :
      The development of two-dimensional (2D) layered materials is driven by fundamental interest and their potential applications. Atomically thin 2D materials provide a wide range of basic building blocks with unique electrical, optical, and thermal properties which do not exist in their bulk counterparts. The van der Waals interlayer interaction enables the possibility to exfoliate and reassemble different 2D materials into arbitrarily and vertically stacked heterostructures. Recently developed vapor phase growth of 2D materials further paves the way of directly synthesizing vertical and lateral heterojunctions. This review provides insights into the layered 2D heterostructures, with a concise introduction to preparative approaches for 2D materials and heterostructures. These unique 2D heterostructures have abundant implications for many potential applications.
    • File Description:
      application/pdf
    • ISSN:
      13697021
    • Relation:
      http://linkinghub.elsevier.com/retrieve/pii/S1369702115003776; Heterostructures based on two-dimensional layered materials and their potential applications 2015 Materials Today; Materials Today; http://hdl.handle.net/10754/583280
    • الرقم المعرف:
      10.1016/j.mattod.2015.11.003
    • الدخول الالكتروني :
      http://hdl.handle.net/10754/583280
      https://doi.org/10.1016/j.mattod.2015.11.003
    • Rights:
      Archived with thanks to Materials Today. Under a Creative Commons license http://creativecommons.org/licenses/by-nc-nd/4.0/
    • الرقم المعرف:
      edsbas.3118F164