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Flat metamorphic InAlAs buffer layer on GaAs(111)A misoriented substrates by growth kinetics control

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اقرأ أكثر حفظ في قائمتي
  • معلومة اضافية
    • Contributors:
      Tuktamyshev, A; Vichi, S; Cesura, F; Fedorov, A; Bietti, S; Chrastina, D; Tsukamoto, S; Sanguinetti, S
    • الموضوع:
      2022
    • Collection:
      RE.PUBLIC@POLIMI - Research Publications at Politecnico di Milano
    • نبذة مختصرة :
      We have successfully grown, through the detailed control of the growth kinetics, flat InAlAs metamorphic buffer layers on 2 degrees -off GaAs(111)A substrates using molecular beam epitaxy. Almost full plastic relaxation is obtained for a layer thickness > 40 nm. The control of an adatom diffusion length and a step ejection probability from the bunches permits a reduction of the InAlAs epilayer root-mean-square surface roughness to 0.55 nm.
    • File Description:
      STAMPA
    • Relation:
      info:eu-repo/semantics/altIdentifier/wos/WOS:000888049100001; volume:600; firstpage:1; lastpage:6; numberofpages:6; journal:JOURNAL OF CRYSTAL GROWTH; https://hdl.handle.net/11311/1227518; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85139828021; https://www.sciencedirect.com/science/article/pii/S0022024822003888
    • الرقم المعرف:
      10.1016/j.jcrysgro.2022.126906
    • Rights:
      info:eu-repo/semantics/openAccess
    • الرقم المعرف:
      edsbas.261EFF5B