Evaluation of embedded STT-MRAM for Ultra Low Power applications

National audience ; The complexity of embedded devices increases as today's applications request always more services. However, the power consumption of SoC has significantly increased due to the high-density integration and the high leakage power of current CMOS transistors. To address these issues, emerging technologies are considered. Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) is seen as a promising alternative solution to traditional memories thanks to its negligible leakage current, high density, and non-volatility. Considering low-power applications with duty-cycled behaviours, we evaluate STT-MRAM as a replacement for both embedded Flash and SRAM.