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EBIC MEASUREMENTS OF A TRIPLE JUNCTION IN POLYCRYSTALLINE SILICON

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اقرأ أكثر حفظ في قائمتي
  • المؤلفون: Bary, A.; Nouet, G.
  • المصدر:
    Journal de Physique Colloques ; https://hal.science/jpa-00230332 ; Journal de Physique Colloques, 1990, 51 (C1), pp.C1-423-C1-428. ⟨10.1051/jphyscol:1990165⟩
  • الموضوع:
    [PHYS.HIST]Physics [physics]/Physics archives
  • نوع التسجيلة:
    article in journal/newspaper
  • اللغة:
    English
  • معلومة اضافية
    • بيانات النشر:
      HAL CCSD
    • الموضوع:
      1990
    • Collection:
      Archive ouverte HAL (Hyper Article en Ligne, CCSD - Centre pour la Communication Scientifique Directe)
    • نبذة مختصرة :
      A triple junction cut from a polycrystalline silicon ingot has been analyzed by TEM and EBIC. This triple junction is made up of a low angle grain boundary, a near coincidence grain boundary and a general grain boundary. These three defects contain precipitates. It is shown that the recombination velocities measured from the EBIC signal are proportional to the precipitate density.
    • Relation:
      jpa-00230332; https://hal.science/jpa-00230332; https://hal.science/jpa-00230332/document; https://hal.science/jpa-00230332/file/ajp-jphyscol199051C165.pdf
    • الرقم المعرف:
      10.1051/jphyscol:1990165
    • Rights:
      info:eu-repo/semantics/OpenAccess
    • الرقم المعرف:
      edsbas.1E20A57D