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EBIC MEASUREMENTS OF A TRIPLE JUNCTION IN POLYCRYSTALLINE SILICON
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- المؤلفون: Bary, A.; Nouet, G.
- المصدر:
Journal de Physique Colloques ; https://hal.science/jpa-00230332 ; Journal de Physique Colloques, 1990, 51 (C1), pp.C1-423-C1-428. ⟨10.1051/jphyscol:1990165⟩
- الموضوع:
- نوع التسجيلة:
article in journal/newspaper
- اللغة:
English
- معلومة اضافية
- بيانات النشر:
HAL CCSD
- الموضوع:
1990
- Collection:
Archive ouverte HAL (Hyper Article en Ligne, CCSD - Centre pour la Communication Scientifique Directe)
- نبذة مختصرة :
A triple junction cut from a polycrystalline silicon ingot has been analyzed by TEM and EBIC. This triple junction is made up of a low angle grain boundary, a near coincidence grain boundary and a general grain boundary. These three defects contain precipitates. It is shown that the recombination velocities measured from the EBIC signal are proportional to the precipitate density.
- Relation:
jpa-00230332; https://hal.science/jpa-00230332; https://hal.science/jpa-00230332/document; https://hal.science/jpa-00230332/file/ajp-jphyscol199051C165.pdf
- الرقم المعرف:
10.1051/jphyscol:1990165
- Rights:
info:eu-repo/semantics/OpenAccess
- الرقم المعرف:
edsbas.1E20A57D
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