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Effects of photowashing treatment on electrical properties of an AlGaN/GaN heterostructure field-effect transistor

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  • معلومة اضافية
    • Contributors:
      신소재공학과; 10105416; Lee, JL
    • بيانات النشر:
      A V S AMER INST PHYSICS
    • الموضوع:
      2002
    • Collection:
      Pohang University of Science and Technology (POSTECH): Open Access System for Information Sharing (OASIS)
    • نبذة مختصرة :
      The effects of photowashing treatment on the electrical properties of an AlGaN/GaN heterostructure field-effect transistor were studied by observing changes in atomic composition and band bending at the surface of AlGaN through synchrotron radiation photoemission spectroscopy. The surface treatment produced group-III oxides on the surface of AlGaN, leaving N vacancies behind. Both the gate leakage current (I-GD) and drain current (I-DS) simultaneously decreased after the treatment. The decrease of I-GD was due to a delay in movement of the electrons, namely, trapping and detrapping. The trapped electrons reduced the effective channel thickness, and led to the reduction of IDS (C) 2002 American Vacuum Society. ; open ; 1 ; 1 ; 0 ; scie ; scopus
    • ISSN:
      1071-1023
    • Relation:
      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B; 20; 1574; 1577; SCI급, SCOPUS 등재논문; SCI; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied; Engineering; Science & Technology - Other Topics; Physics; 2015-OAK-0000002847; https://oasis.postech.ac.kr/handle/2014.oak/11256; 2931; JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.20, no.4, pp.1574 - 1577; 000177510500051; 2-s2.0-0035982590
    • الرقم المعرف:
      10.1116/1.1491554
    • Rights:
      BY_NC_ND ; http://creativecommons.org/licenses/by-nc-nd/2.0/kr
    • الرقم المعرف:
      edsbas.1B320BD7