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Directional Thermal Diffusion Realizing Inorganic Sb2Te3/Te Hybrid Thin Films with High Thermoelectric Performance and Flexibility

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  • معلومة اضافية
    • Contributors:
      Shenzhen University; Queensland University of Technology Brisbane (QUT); The University of Queensland (UQ All campuses : Brisbane, Dutton Park Gatton, Herston, St Lucia and other locations ); Beijing Institute of Technology (BIT); Institut des Sciences Chimiques de Rennes (ISCR); Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes); Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS); National Natural Science Foundation of China 11604212; National Natural Science Foundation of Guangdong Province of China 2022A1515010929; Science and Technology plan project of Shenzhen 20200811230408001; Australian Research Council; HBIS-UQ Innovation Centre for Sustainable Steel project; QUT Capacity Building Professor Program
    • بيانات النشر:
      HAL CCSD
      Wiley
    • الموضوع:
      2022
    • Collection:
      Université de Rennes 1: Publications scientifiques (HAL)
    • نبذة مختصرة :
      International audience ; Inorganic films possess much higher thermoelectric performance than their organic counterparts, but their poor flexibilities limit their practical applications. Here, Sb2Te3/Te-x hybrid thin films with high thermoelectric performance and flexibility, fabricated via a novel directional thermal diffusion reaction growth method are reported. The directional thermal diffusion enables rationally tuning the Te content in Sb2Te3, which optimizes the carrier density and leads to a significantly enhanced power factor of >20 mu W cm(-1) K-2, confirmed by both first-principles calculations and experiments; while dense boundaries between Te and Sb2Te3 nanophases, contribute to the low thermal conductivity of approximate to 0.86 W m(-1) K-1, both induce a high ZT of approximate to 1 in (Sb2Te3)(Te)(1.5) at 453 K, ranking as the top value among the reported flexible films. Besides, thin films also exhibit extraordinary flexibility. A rationally designed flexible device composed of (Sb2Te3)(Te)(1.5) thin films as p-type legs and Bi2Te3 thin films as n-type legs shows a high power density of >280 mu W cm(-2) at a temperature difference of 20 K, indicating a great potential for sustainably charging low-power electronics.
    • Relation:
      hal-03797271; https://hal.science/hal-03797271; https://hal.science/hal-03797271/document; https://hal.science/hal-03797271/file/hal-03797271.pdf
    • الرقم المعرف:
      10.1002/adfm.202207903
    • Rights:
      http://creativecommons.org/licenses/by-nc-nd/ ; info:eu-repo/semantics/OpenAccess
    • الرقم المعرف:
      edsbas.1AA8F64A