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Nonequilibrium carrier and phonon dynamics in the ferrimagnetic semiconductor Mn$_3$Si$_2$Te$_6$

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  • معلومة اضافية
    • الموضوع:
      2024
    • Collection:
      Condensed Matter
    • نبذة مختصرة :
      We investigate the ultrafast carrier and phonon dynamics in the ferrimagnetic semiconductor Mn$_3$Si$_2$Te$_6$ using time-resolved optical pump-probe spectroscopy. Our results reveal that the electron-phonon thermalization process with a subpicosecond timescale is prolonged by the hot-phonon bottleneck effect. We identify the subsequent relaxation processes associated with two non-radiative recombination mechanisms, i.e., phonon-assisted electron-hole recombination and defect-related Shockley-Read-Hall recombination. Temperature-dependent measurements indicate that all three relaxation components show large variation around 175 and 78 K, which is related to the initiation of spin fluctuation and ferrimagnetic order in Mn$_3$Si$_2$Te$_6$. In addition, two pronounced coherent optical phonons are observed, in which the phonon with a frequency of 3.7 THz is attributed to the $A_{1g}$ mode of Te precipitates. Applying the strain pulse propagation model to the coherent acoustic phonons yields a penetration depth of 506 nm and a sound speed of 2.42 km/s in Mn$_3$Si$_2$Te$_6$. Our results develop understanding of the nonequilibrium properties of the ferrimagnetic semiconductor Mn$_3$Si$_2$Te$_6$, and also shed light on its potential applications in optoelectronic and spintronic devices.
      Comment: 7 pages, 6 figures
    • الرقم المعرف:
      10.1103/PhysRevB.109.174309
    • الرقم المعرف:
      edsarx.2405.11737