Evidence for a conducting surface ground state in high-quality single crystalline FeSi

We report anomalous physical properties of high-quality single-crystalline FeSi over a wide temperature range of 1.8–400 K. The electrical resistivity [Formula: see text] ([Formula: see text]) can be described by activated behavior with an energy gap [Formula: see text] = 57 meV between 150 and 67 K, below which the estimated energy gap is significantly smaller. The magneto-resistivity and Hall coefficient change sign in the vicinity of 67 K, suggesting a change of dominant charge carriers. At [Formula: see text] 19 K, [Formula: see text] ([Formula: see text]) undergoes a cross-over from semiconducting to metallic behavior which is very robust against external magnetic fields. The low-temperature metallic conductivity depends strongly on the width/thickness of the sample. In addition, no indication of a bulk-phase transition or onset of magnetic order is found down to 2 K from specific heat and magnetic susceptibility measurements. The measurements are consistent with one another and point to complex electronic transport behavior that apparently involves a conducting surface state in FeSi at low temperatures, suggesting the possibility that FeSi is a 3D topological insulator.