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Hexagonal Si−Ge Class of Semiconducting Alloys Prepared by Using Pressure and Temperature

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  • معلومة اضافية
    • Contributors:
      University of Edinburgh; German Research Centre for Geosciences - Helmholtz-Centre Potsdam (GFZ); Unité Matériaux et Transformations - UMR 8207 (UMET); Centrale Lille-Institut de Chimie du CNRS (INC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE); University of Bayreuth; European Synchrotron Radiation Facility (ESRF); Oak Ridge National Laboratory [Oak Ridge] (ORNL); UT-Battelle, LLC; Institut für Geowissenschaften [Frankfurt am Main]; Goethe-Universität Frankfurt am Main; Deutsches Elektronen-Synchrotron [Hamburg] (DESY); University of Potsdam = Universität Potsdam; Institut de Chimie du CNRS (INC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-Centrale Lille Institut (CLIL); LInguistique et DIdactique des Langues Étrangères et Maternelles (LIDILEM); Université Stendhal - Grenoble 3; Max-Planck-Institut für Chemie (MPIC); Max-Planck-Gesellschaft; University of Potsdam
    • بيانات النشر:
      Wiley, 2021.
    • الموضوع:
      2021
    • نبذة مختصرة :
      International audience; Multi-anvil and laser-heated diamond anvil methods areused to subject Ge and Si mixtures to pressures and temperaturesof between 12 and 17 GPa and 1500 – 1800 K, respectively.Synchrotron angle dispersive X-ray diffraction, precession electrondiffraction and chemical analysis using electron microscopy, revealrecovery at ambient pressure of hexagonal Ge-Si solid solutions(P63/mmc). Taken together, the multi-anvil and diamond anvil resultsreveal that hexagonal solid solutions can be prepared for all Ge-Sicompositions. This hexagonal class of solid solutions constitutes asignificant expansion of the bulk Ge-Si solid solution family, and is ofactive interest for optoelectronic applications.
    • File Description:
      application/pdf
    • ISSN:
      1521-3765
      0947-6539
    • Rights:
      OPEN
    • الرقم المعرف:
      edsair.doi.dedup.....2a31a53930ebc241a52d7f2e0257e502