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C-axis oriented growth of ZnO nanorods over Mg:GaN for improved heterojunction device performance

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  • معلومة اضافية
    • بيانات النشر:
      AIP Publishing LLC, 2019.
    • الموضوع:
      2019
    • نبذة مختصرة :
      Heterojunction device performance has strong dependence on its junction interface. ZnO deposition over GaN to achieve a heterojunction is challenging as it usually requires high temperature and vacuum processing. It is even more demanding to achieve a crystalline interface while making ZnO nanorod based heterojunction. Here we report simple solution process for epitaxial growth of ZnO nanorods over GaN. High resolution x-ray diffraction studies revealed highly crystalline c-axis oriented ZnO nanorod growth by a simple hydrothermal process. ZnO/GaN heterojunction device fabricated using hydrothermally synthesized ZnO nanorods showed superior performance compared to polycrystalline sputter deposited ZnO based heterojunction.
    • ISSN:
      2158-3226
    • Rights:
      OPEN
    • الرقم المعرف:
      edsair.doi.dedup.....1a42ab4cb7897770564f8ddbd387b742