نبذة مختصرة : Heterojunction device performance has strong dependence on its junction interface. ZnO deposition over GaN to achieve a heterojunction is challenging as it usually requires high temperature and vacuum processing. It is even more demanding to achieve a crystalline interface while making ZnO nanorod based heterojunction. Here we report simple solution process for epitaxial growth of ZnO nanorods over GaN. High resolution x-ray diffraction studies revealed highly crystalline c-axis oriented ZnO nanorod growth by a simple hydrothermal process. ZnO/GaN heterojunction device fabricated using hydrothermally synthesized ZnO nanorods showed superior performance compared to polycrystalline sputter deposited ZnO based heterojunction.
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