نبذة مختصرة : The solar cell industry has presented high growth rates and dealt with a large portfolio of suppliers for specific equipments like diffusion furnaces needed to produce the pn junction in the fabrication of silicon devices. The aim of this paper is to present the thermal analysis and the characterization of diffusions carried out in the first diffusion furnace developed and fabricated in Brazil. Longitudinal and radial temperature profiles were measured and analyzed. Results of the characterization defined a processing zone of 200 mm with temperature variation lower than 6°C for the temperatures up to 965°C. In the processing zone, 40 silicon wafers can be processed. Diffusion processes were performed in monocrystalline silicon wafers and n+ regions doped with phosphorus presented standard deviation of sheet resistance slightly higher than that obtained in imported commercial furnaces. Wafer contamination was not observed during diffusion processes and the minority carrier lifetime was improved
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