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Impact of heavy-ion irradiation on gate oxide reliability of silicon carbide power MOSFET

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اقرأ على الانترنت اقرأ أكثر حفظ في قائمتي
  • معلومة اضافية
    • بيانات النشر:
      Informa UK Limited, 2021.
    • الموضوع:
      2021
    • نبذة مختصرة :
      SiC power MOSFETs were exposed to 79Br, 64Cu, and 47Ti ions with different biases. After irradiation, the static parameters of the device did not change significantly. The oxide reliability is also...
    • ISSN:
      1029-4953
      1042-0150
    • الرقم المعرف:
      10.1080/10420150.2021.1999239
    • الرقم المعرف:
      edsair.doi...........ee03a13ced68ad3281e1ab15ac5d2713