Thermodynamic simulation of silicon deposition from the gas phase of Si-Cl-H system

Deposition of silicon from gas mixtures including trichlorosilane and silicon tetrachloride are studied with thermodynamic simulation techniques. Process outputs for a wide range of conditions (temperature, pressure, composition of the input gas phase) are determined. Conditions for the process of obtaining polycrystalline silicon and synthesis of epitaxial layers are recommended.