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The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells

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  • معلومة اضافية
    • بيانات النشر:
      Pleiades Publishing Ltd, 2016.
    • الموضوع:
      2016
    • نبذة مختصرة :
      It is shown that a short-time Joule heating of the active region of light-emitting diodes with InGaN/GaN quantum wells up to 125°C at a current density of 150 A/cm2 stimulates changes in the energy spectrum of defect states in the energy gap of GaN and leads to an increase in the quantum efficiency.
    • ISSN:
      1090-6533
      1063-7850
    • Rights:
      CLOSED
    • الرقم المعرف:
      edsair.doi...........69aa1182099600ac284e1c333562815b