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Influence of High Electric Field on Operation of AlGaN/AlN/GaN High Electron Mobility Transistor
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- معلومة اضافية
- بيانات النشر:
Institute of Physics, Polish Academy of Sciences, 2021.
- الموضوع:
2021
- ISSN:
0587-4246
1898-794X
- Rights:
OPEN
- الرقم المعرف:
edsair.doi...........5a8931a4fab4f46337bc574e33805e8e
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