Enhanced grain growth in yttria-doped zirconia thin film structures synthesized under photon irradiation

Enhanced grain growth in ultra-thin yttria-doped zirconia (YDZ) films synthesized under ultraviolet (UV) irradiation is reported. The mean grain size in UV-synthesized 7.5 mol% YDZ films nearly 56 nm thick increased to 85 nm upon annealing in an oxygen-rich ambient at 900°C for 1 h, while in thermally grown YDZ they grew only to ∼15 nm under identical annealing conditions. In situ electron microscopy kinetic studies reveal an enhanced kinetic constant and self-limiting grain growth behaviour in the UV-synthesized oxide films. The difference between UV and thermally grown films was not significant in undoped films when compared to the case of 7.5 mol% YDZ.