Conductance of a lateral p—n junction in two-dimensional HgTe structures with an inverted spectrum: The role of edge states

The conductance of a lateral p—n junction in two-dimensional HgTe structures with an inverted spectrum is measured. It is shown that Klein tunneling is rather inefficient in 8- to 10-nm-thick quantum wells and does not hinder the identification of the edge-state contribution to the conductance. The separation of the contributions from the p—n junction and the edge states is possible upon the simultaneous measurement of the resistance of the p—n junction regions in channels with substantially different widths.