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Specific features of formation of GaAs nanowire crystals during molecular beam epitaxy on different silicon surfaces.
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- المؤلفون: Samsonenko, Yu. B.1,2,3 ; Cirlin, G. É1,2,3; Egorov, V. A1,3; Polyakov, N. K.1,2,3; Ulin, V. P.2; Dubrovskii, V. G.2,3
- المصدر:
Semiconductors. Dec2008, Vol. 42 Issue 12, p1445-1449. 5p. 4 Black and White Photographs, 2 Graphs.
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