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Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride.
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- المؤلفون: Belyaev, A. E.1; Boltovets, N. S.2; Ivanov, V. N.2; Klad'ko, V. P.1; Konakova, R. V.1 ; Kudrik, Ya. Ya.1; Kuchuk, A. V.1; Milenin, V. V.1; Sveshnikov, Yu. N.3; Sheremet, V. N.1
- المصدر:
Semiconductors. Jun2008, Vol. 42 Issue 6, p689-693. 5p. 1 Diagram, 1 Chart, 2 Graphs.
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