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High-voltage (900 V) 4 H-SiC Schottky diodes with a boron-implanted guard p-n junction.
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- المؤلفون: Grekhov, I.1; Ivanov, P.1 ; Il’inskaya, N.1; Kon’kov, O.1; Potapov, A.1; Samsonova, T.1
- المصدر:
Semiconductors. Feb2008, Vol. 42 Issue 2, p211-214. 4p. 1 Black and White Photograph, 1 Diagram, 3 Graphs.
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