Improvement in pH sensitivity of low-temperature polycrystalline-silicon thin-film transistor sensors using H2 sintering.

Publisher: MDPI Country of Publication: Switzerland NLM ID: 101204366 Publication Model: Electronic Cited Medium: Internet ISSN: 1424-8220 (Electronic) Linking ISSN: 14248220 NLM ISO Abbreviation: Sensors (Basel) Subsets: PubMed not MEDLINE

Original Publication: Basel, Switzerland : MDPI, c2000-

In this article, we report an improvement in the pH sensitivity of low-temperature polycrystalline-silicon (poly-Si) thin-film transistor (TFT) sensors using an H2 sintering process. The low-temperature polycrystalline-silicon (LTPS) TFT sensor with H2 sintering exhibited a high sensitivity than that without H2 sintering. This result may be due to the resulting increase in the number of Si-OH2(+) and Si-O(-) bonds due to the incorporation of H in the gate oxide to reduce the dangling silicon bonds and hence create the surface active sites and the resulting increase in the number of chemical reactions at these surface active sites. Moreover, the LTPS TFT sensor device not only offers low cost and a simple fabrication processes, but the technique also can be extended to integrate the sensor into other systems.

J Biochem Biophys Methods. 2005 Apr 29;63(1):1-9. (PMID: 15892973)
Chem Commun (Camb). 2008 Nov 30;(44):5749-51. (PMID: 19009069)
Biosens Bioelectron. 2009 Jun 15;24(10):3019-24. (PMID: 19362813)
IEEE Trans Biomed Eng. 1970 Jan;17(1):70-1. (PMID: 5441220)

Date Created: 20140228 Date Completed: 20150406 Latest Revision: 20230328

20240628

PMC4003917

10.3390/s140303825

24573308