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Electron Mobility in Bulk n-Doped SiC-Polytypes 3C-SiC, 4H-SiC, and 6H-SiC: A Comparison.

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  • المؤلفون: Rodrigues, C. G.1 (AUTHOR)
  • المصدر:
    Semiconductors. Jul2021, Vol. 55 Issue 7, p625-632. 8p.